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| Directed Energy, Inc. An DE375-102N12A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency VDSS ID25 RDS(on) Maximum Ratings 1000 1000 20 30 12 72 12 30 5 >200 550 4.5 -55...+150 150 -55...+150 V V V V A A A mJ V/ns V/ns W W C C C C g Features SG1 SG2 GATE = = = = 1000 V 12 A 1.07 550 W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 Tc = 25C Derate 4.4W/C above 25C Tc = 25C PDHS DRAIN SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 3 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances Test Conditions Characteristic Values TJ = 25C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C TJ = 125C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 100 V nA 1000 2.5 50 A 1 mA 1.07 12 S Advantages * Optimized for RF and high speed switching at frequencies to 50MHz * Easy to mount--no insulators needed * High power density Directed Energy, Inc. An DE375-102N12A RF Power MOSFET IXYS Company Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. 0.3 2700 VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Symbol max. pF pF pF ns ns ns ns nC nC nC K/W RG Ciss Coss Crss Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd RthJHS VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) 305 93 5 3 5 8 93 16 42 0.23 Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM IF = IS, -di/dt = 100A/s, VR = 100V Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 12 72 1.5 200 0.6 7 A A V ns C A Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on DEI's web site at www.directedenergy.com/apptech.htm Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 Directed Energy, Inc. An DE375-102N12A RF Power MOSFET IXYS Company 102N12A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N12A 10 20 30 * TERMINALS: D G S * 1000 Volt 12 Amp 1.07 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.7N RD 4 1 1.1 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0249 Rev 1 (c) 2002 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com |
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